MBRF10H100CTHE3 Просмотр технического описания (PDF) - Vishay Semiconductors
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MBRF10H100CTHE3 Datasheet PDF : 5 Pages
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MBR(F,B)10H90CT & MBR(F,B)10H100CT
Vishay General Semiconductor
100
TJ = 175 °C
10
TJ = 150 °C
1
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 25 °C
TJ = - 40 °C
0.01
0.1
0.3
0.5
0.7
0.9
1.1
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
10 000
1000 TJ = 150 °C
100
10
TJ = 125 °C
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
1000
100
Junction to Case
10
1
0.1
0.01
MBRF
0.1
1
10
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
100
Junction to Case
10
1
0.1
0.01
MBRF
0.1
1
10
100
t - Pulse Duration (s)
Figure 7. Typical Transient Thermal Impedance Per Diode
100
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
Document Number: 88668 For technical questions within your region, please contact one of the following:
Revision: 08-Nov-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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