MBR10H100CT-E3 Просмотр технического описания (PDF) - Vishay Semiconductors
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MBR10H100CT-E3 Datasheet PDF : 5 Pages
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MBR(F,B)10H90CT & MBR(F,B)10H100CT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5.0 A TJ = 25 °C
Maximum instantaneous forward voltage per diode (1)
IF = 5.0 A
IF = 10 A
TJ = 125 °C
TJ = 25 °C
VF
IF = 10 A TJ = 125 °C
Maximum reverse current per diode at working peak
reverse voltage (1)
Note:
TJ = 25 °C
TJ = 100 °C
IR
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
VALUE
0.76
0.61
0.85
0.71
3.5
4.5
UNIT
V
µA
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
Typical thermal resistance per diode
RθJC
2.2
MBRF
5.2
MBRB
2.2
UNIT
°C/W
,
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
MBR10H100CT-E3/45
1.85
ITO-220AB
MBRF10H100CT-E3/45
1.79
TO-263AB
MBRB10H100CT-E3/45
1.35
TO-263AB
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
MBRB10H100CT-E3/81
MBR10H100CTHE3/45 (1)
MBRF10H100CTHE3/45 (1)
MBRB10H100CTHE3/45 (1)
MBRB10H100CTHE3/81 (1)
1.35
1.85
1.79
1.35
1.35
Note:
(1) Automotive grade AEC Q101 qualified
PACKAGE CODE
45
45
45
81
45
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape reel
Tube
Tube
Tube
Tape reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
MBR
MBRB
10
8
6
4
MBRF
2
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Forward Derating Curve Per Diode
175
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
150
125
100
75
50
25
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88668
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 08-Nov-07
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