MBRB4030 Просмотр технического описания (PDF) - ON Semiconductor
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MBRB4030 Datasheet PDF : 6 Pages
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MBRB4030
ELECTRICAL CHARACTERISTICS
70
DC
60
π (RESISTIVE LOAD)
50 SQUARE WAVE
40
IPK = 5.0 (CAPACITIVE
IAV
LOAD)
30
20
10
10
20
0
100
110
120
130
140
150
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating, Infinite Heatsink
20
DC
SQUARE WAVE
15 π
(RESISTIVE LOAD)
10
10
5
20
RqJA = 25°C/W
SURFACE MOUNTED ON
MINIMUM RECOMMENDED
PAD SIZE
IPK
IAV
= 5.0 (CAPACITIVE
LOAD)
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Current Derating
12
50
RqJA = 50°C/W
TJ = 150°C
DC
10
π (RESISTIVE LOAD)
8
SQUARE WAVE
π (RESISTIVE LOAD)
40 IPK = 5.0 (CAPACITIVE
IAV
LOAD)
SQUARE WAVE
30
6
IPK = 5.0 (CAPACITIVE
IAV
LOAD)
10
20
4
10
20
DC
2
20
10
0
0
0
50
100
150
0 10 20 30 40 50 60 70 80
TA, AMBIENT TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 8. Current Derating, Free Air
Figure 9. Forward Power Dissipation
1.0
SINGLE PULSE
0.1
0.01
0.1
tp
Ppk
Ppk
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk, is peak of an
TIME equivalent square power pulse.
t1
DTJL = Ppk • RqJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)]
where
DTJL = the increase in junction temperature above the lead temperature
r(t) = normalized value of transient thermal resistance at time, t, for example,
r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.
1.0
10
t, TIME (ms)
100
1000
Figure 10. Thermal Response
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