MBRF1035 Просмотр технического описания (PDF) - Galaxy Semi-Conductor
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MBRF1035 Datasheet PDF : 2 Pages
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BL GALAXY ELECTRICAL
SCHOTTKY BARRIER RECTIFIER
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MECHANICAL DATA
Cas e:JEDEC ITO-220AC,m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Pos ition: Any
Weight: 0.064 ounces,1.81 gram
MBRF1030 - - - MBRF10100
VOLTAGE RANGE: 30 - 100 V
CURRENT: 10 A
ITO-220AC
0.405(10.27)
0.383(9.72)
PIN
1
2
0.191(4.85)
0.171(4.35)
0.060(1.52)
0.140(3.56) DIA
0.130(3.30)
0.350(8.89)
0.330(8.38)
0.188(4.77)
0.172(4.36)
0.110(2.80)
0.100(2.54)
0.131(3.39)
0.122(3.08) DIA
0.110(2.80)
0.100(2.54)
0.105(2.67)
0.095(2.41)
0.037(0.94)
0.027(0.69)
PIN1
0.205(5.20)
0.195(4.95)
PIN2
Dimensions in inches and(millimeters)
0.022(0.55)
0.014(0.36)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBRF
1030
MBRF
1035
MBRF MBRF MBRF MBRF MBRF MBRF
1040 1045 1050 1060 1090 10100
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
VRRM 30
35
40
45
50
60
90 100
V
V R MS
21
25
28
32
35
42
63
70
V
VDC
30
35
40
45
50
60
90 100
V
Maximum average forw ard total device
m rectif ied current @TC = 133°C
IF(AV)
10
A
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
IFSM
150
A
Maximum forw ard
v oltage
(Note 1)
(IF=10A,TC=25 )
(IF=10A,TC=125 )
(I F=20A ,TC=25 )
(IF=20A ,TC=125 )
Maximum reverse current
@T =25
C
at rated DC blocking voltage @TC=125
Maximum thermal resistance (Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
3.TC=100
VF
IR
R θJC
TJ
TSTG
-
0.57
0.84
0.72
0.80
0.70
0.95
0.85
0.1
15
4.0
- 55 ---- + 150
- 55 ---- + 175
0.80
0.65
0.95
0.75
6.03)
V
mA
/W
www.galaxycn.com
Document Number 0267031
BLGALAXY ELECTRICAL
1.
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