MBR340(2002) Просмотр технического описания (PDF) - ON Semiconductor
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MBR340 Datasheet PDF : 4 Pages
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MBR340
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient (see Note 4, Mounting Method 3)
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 2)
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF = 9.4 Amp)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 3)
TL = 25°C
TL = 100°C
2. Lead Temperature reference is cathode lead 1/32″ from case.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
Symbol
RθJA
Symbol
vF
iR
Max
28
Max
0.500
0.600
0.850
0.60
20
Unit
°C/W
Unit
V
mA
20
10
7.0
5.0
3.0
2.0
TJ = 150°C
1.0
0.7
0.5
0.3
0.2
25°C
100°C
100
40
20
150°C
10
4.0
2.0
1.0
100°C
1000
0.4
0.2
75°C
0.1
100
0.04
0.02
0.01
0.004
0.002
0.001
0
10
25°C
10
10
20
30
40
VR REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selec-
tions can be estimated from these same curves if VR is sufficiently
below rated VR.
10
0.1
0.07
0.05
0.03
0.02
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
8.0
6.0
4.0
2.0
SQUARE
WAVE
dc
0
20 40 60 80 100 120 140 160 180 200
TA, AMBIENT TEMPERATURE (C°)
Figure 3. Current Derating
(Mounting Method #3 per Note 4)
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