MBR3045ST(2011) Просмотр технического описания (PDF) - ON Semiconductor
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MBR3045ST Datasheet PDF : 5 Pages
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MBR3045ST, MBRB3045CT−1
THERMAL CHARACTERISTICS (Per Diode)
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (Per Diode)
Instantaneous Forward Voltage (Note 2)
(iF = 15 Amp, TC = 25°C)
(iF = 15 Amp, TC = 125°C)
(iF = 30 Amp, TC = 25°C)
(iF = 30 Amp, TC = 125°C)
Instantaneous Reverse Current (Note 2) (VR = 45 Volts, TC = 25°C)
(VR = 45 Volts, TC = 125°C)
2 Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤ 2.0%
Symbol
RθJC
vF
IR
Value
1.5
0.62
0.57
0.76
0.72
0.2
40
Unit
°C/W
Volts
mA
1000
100
TJ = 125°C
10
150°C
1000
100
TJ = 125°C
10
150°C
1.0
25°C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1.0
25°C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
vF, MAXIMUM FORWARD VOLTAGE (VOLTS)
Figure 2. Maximum Reverse Current
200
100
40
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.04
0.02
0.01
0.004
0.002
0
TJ = 150°C
125°C
100°C
75°C
25°C
10
20
30
40
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
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