MBR2045CT(2007) Просмотр технического описания (PDF) - ON Semiconductor
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MBR2045CT Datasheet PDF : 6 Pages
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MBR2045CT
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
45
V
VRWM
VR
Average Rectified Forward Current
Per Device
Per Diode (TC = 165°C)
Peak Repetitive Forward Current
per Diode Leg (Square Wave, 20 kHz, TC = 163°C)
IF(AV)
A
20
10
IFRM
20
A
Non−Repetitive Peak Surge Current
IFSM
150
A
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
See Figure 11
IRRM
1.0
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
−65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Junction−to−Case (Min. Pad)
Maximum Thermal Resistance, Junction−to−Ambient (Min. Pad)
Symbol
RqJC
RqJA
Max
2.0
60
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, TJ = 125°C)
(iF = 20 Amps, TJ = 125°C)
(iF = 20 Amps, TJ = 25°C)
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol
Min
vF
−
−
−
iR
−
−
Typ
0.50
0.67
0.71
10.4
0.02
Max
Unit
V
0.57
0.72
0.84
mA
15
0.1
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