MBR1100G Просмотр технического описания (PDF) - ON Semiconductor
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MBR1100G Datasheet PDF : 4 Pages
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MBR1100
THERMAL CHARACTERISTICS (See Note 4)
Characteristic
Thermal Resistance, Junction−to−Ambient
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 1 A, TL = 25°C)
(iF = 1 A, TL = 100°C)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
(TL = 25°C)
(TL = 100°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol
RqJA
Symbol
VF
iR
Max
See Note 3
Max
0.79
0.69
0.5
5.0
Unit
°C/W
Unit
V
mA
20
10
5.0
TJ = 150°C
100°C
2.0
25°C
1.0
0.5
0.2
0.1
0.05
0.02
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1K
400
200
100
40
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.04
0.02
0.01
0
TJ = 150°C
125°C
100°C
10 20 30 40 50 60 70 80 90 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current {
{ The curves shown are typical for the highest voltage
device in the voltage grouping. Typical reverse current for
lower voltage selections can be estimated from these
same curves if VR is sufficiently below rated VR.
4.0
4.0
3.0
dc
2.0
SQUARE WAVE
1.0
3.0
SQUARE WAVE
dc
2.0
1.0
0
0
0 20 40 60 80 100 120 140 160 180 200
0
1.0
2.0
3.0
4.0
5.0
TA, AMBIENT TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Current Derating
(Mounting Method 3 per Note 3)
Figure 4. Power Dissipation
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