MBM29LV800BE60 Просмотр технического описания (PDF) - Fujitsu

Номер в каталоге

Компоненты Описание

производитель

MBM29LV800BE60

FLASH MEMORY CMOS 8 M (1 M × 8/512 K × 16) BIT

Fujitsu 

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20888-6E

FLASH MEMORY

CMOS

8 M (1 M × 8/512 K × 16) BIT

MBM29LV800TE60/70/90/MBM29LV800BE60/70/90

s DESCRIPTION

The MBM29LV800TE/BE are a 8 M-bit, 3.0 V-only Flash memory organized as 1 M bytes of 8 bits each or

512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin TSOP (1) , 48-pin CSOP and 48-

ball FBGA package. These devices are designed to be programmed in a system with the standard system 3.0 V

VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be

reprogrammed in standard EPROM programmers.

(Continued)

s PRODUCT LINE UP

Part No.

Ordering Part No.

VCC

=

3.3

V +0.3 V

−0.3 V

VCC

=

3.0

V +0.6 V

−0.3 V

Max Address Access Time (ns)

Max CE Access Time (ns)

Max OE Access Time (ns)

MBM29LV800TE/BE

60







70

90

60

70

90

60

70

90

30

30

35

s PACKAGES

48-pin Plastic TSOP (1)

48-pin Plastic CSOP

48-ball Plastic FBGA

(FPT-48P-M19)

(LCC-48P-M03)

(BGA-48P-M20)

Share Link: