MBM29LV800BE60 Просмотр технического описания (PDF) - Fujitsu

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MBM29LV800BE60

FLASH MEMORY CMOS 8 M (1 M × 8/512 K × 16) BIT

Fujitsu 

MBM29LV800TE/BE60/70/90

MBM29LV800TE/BE User Bus Operations (BYTE = VIL)

Operation

CE

OE

WE

DQ15/

A-1

A0

A1

A6

A9 DQ7 to DQ0 RESET

Auto-Select Manufacturer Code *1 L

L

H

L

L

L

L

VID

Code

H

Auto-Select Device Code *1

L

L

H

L

H

L

L

VID

Code

H

Read *3

L

L

H

A-1

A0

A1

A6

A9

DOUT

H

Standby

H X X X X X X X High-Z

H

Output Disable

L H H X X X X X High-Z

H

Write (Program/Erase)

L

H

L

A-1

A0

A1

A6

A9

DIN

H

Enable Sector Protection *2, *4

L

VID

L

L

H

L

VID

X

H

Verify Sector Protection *2, *4

L

L

H

L

L

H

L

VID

Code

H

Temporary Sector Unprotection *5 X X X X X X X X

X

VID

Reset (Hardware) /Standby

X X X X X X X X High-Z

L

Legend : L = VIL, H = VIH, X = VIL or VIH, = Pulse input. See “s DC CHARACTERISTICS” for voltage levels.

*1: Manufacturer and device codes may also be accessed via a command register write sequence.

See “Sector Address Tables (MBM29LV800BE) ” in “s FLEXIBLE SECTOR-ERASE ARCHITECTURE”.

*2: Refer to Sector Protection.

*3: WE can be VIL if OE is VIL, OE at VIH initiates the write operations.

*4: VCC = 3.0 V to 3.6 V (MBM29LV800TE/BE 60)

= 2.7 V to 3.6 V (MBM29LV800TE/BE 70/90)

*5: Also used for the extended sector protection.

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