MBM29LV652UE-12 Просмотр технического описания (PDF) - Fujitsu

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MBM29LV652UE-12

FLASH MEMORY CMOS 64M (4M × 16) BIT

Fujitsu 

MBM29LV652UE-90/12

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A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)

The device also features a sector erase architecture. The sector mode allows each sector to be erased and

reprogrammed without affecting other sectors. The MBM29LV652UE is erased when shipped from the factory.

Internally generated and regulated voltages are provided for the program and erase operations. A low VCC

detector automatically inhibits write operations on the loss of power. The end of program or erase is detected

by Data Polling of DQ7, by the Toggle Bit feature on DQ6. Once the end of a program or erase cycle has been

completed, the devices internally reset to the read mode.

The devices electrically erase all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The words

are programmed one word at a time using the EPROM programming mechanism of hot electron injection.

s FEATURES

• 0.23 µm Process Technology

• Single 3.0 V read, program and erase

Minimizes system level power requirements

• Compatible with JEDEC-standards

Uses same software commands with single-power supply Flash

• Address don’t care during the command sequence

• Industry-standard pinouts

63-ball FBGA (Package suffix: PBT)

• Minimum 100,000 program/erase cycles

• High performance

90 ns maximum access time

• Flexible sector architecture

One hundred twenty-eight 32K word sectors

Any combination of sectors can be concurrently erased. Also supports full chip erase

• Hidden ROM (Hi-ROM) region

128 word of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence

Factory serialized and protected to provide a secure electronic serial number (ESN)

• Ready/Busy Output (RY/BY)

Hardware method for detection of program or erase cycle completion

• ACC input pin

At VACC, increases program performance

• Embedded EraseTM* Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded programTM* Algorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switches themselves to low power mode

• Low VCC write inhibit ≤ 2.5 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read data and/or program in another sector within the same device

• Sector group protection

Hardware method disables any combination of sector groups from program or erase operations

• Sector Group Protection Set function by Extended sector protect command

• Fast Programming Function by Extended Command

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