MBM29DL800BA-70 Просмотр технического описания (PDF) - Spansion Inc.

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Компоненты Описание

производитель

MBM29DL800BA-70

8M (1M X 8/512K X 16) BIT

Spansion Inc. 

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20860-6E

FLASH MEMORY

CMOS

8M (1M × 8 / 512K × 16) BIT

MBM29DL800TA-70/90/MBM29DL800BA-70/90

s FEATURES

• Single 3.0 V read, program, and erase

Minimizes system level power requirements

• Simultaneous operations

Read-while-Erase or Read-while-Program

• Compatible with JEDEC-standard commands

Uses same software commands as E2PROMs

• Compatible with JEDEC-standard worldwide pinouts (Pin compatible with MBM29LV800TA/BA)

48-pin TSOP(1) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)

48-ball FBGA (Package suffix: PBT)

• Minimum 100,000 program/erase cycles

• High performance

70 ns maximum access time

• Sector erase architecture

Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes.

Any combination of sectors can be concurrently erased. Also supports full chip erase.

• Boot Code Sector Architecture

T = Top sector

B = Bottom sector

• Embedded EraseTM Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded ProgramTM Algorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready/Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switch themselves to low power mode.

• Low VCC write inhibit ≤ 2.5 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read in another sector within the same device

Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.

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