MBC13900/D Просмотр технического описания (PDF) - Motorola => Freescale
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MBC13900/D Datasheet PDF : 26 Pages
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Electrical Specifications Freescale Semiconductor, Inc.
1 Electrical Specifications
Table 1. Maximum Ratings
Rating
Symbol
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
Power Dissipation @ TC = 75 C
Derate Linearity above TC = 75 C at
Collector Current-Continuous
PD(max)
IC
Maximum Junction Temperature
TJ(max)
Storage Temperature
Tstg
NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Electrical Characteristics
or Recommended Operating Conditions tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤400 V and
Machine Model (MM) ≤50 V. Additional ESD data available upon request.
Value
6.5
8.0
3.0
0.188
2.5
20
150
-55 to 150
Unit
Vdc
Vdc
Vdc
W
mW/ C
mA
C
C
Table 2. Thermal Characteristic
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
RθJC
400
C/W
NOTES: To calculate the junction termpature use TJ = (PD x RθJC) + TC. The case temperature measured on collector lead adjacent to the
package body.
Table 3. Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
OFF Characteristic [Note 1]
Collector-Emitter Breakdown Voltage
(IC = 0.1 mA, IB = 0)
V(BR)CEO
6.5
7.5
-
Vdc
Collector-Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V(BR)CBO
8.0
12
-
Vdc
Emitter-Base Breakdown Voltage (IE = 0.1 mA, IC = 0)
V(BR)EBO
3.0
4.0
-
Vdc
Collector Cutoff Current (VCB = 7.0 V, IE = 0)
ICBO
-
-
0.1
∝A
Emitter Cutoff Current (VEB = 2.0 V, IC = 0)
IEBO
-
-
0.1
∝A
Base Cutoff Current (VCE = 5.0 V, IB = 0)
ICEO
-
-
0.1
∝A
ON Characteristic [Note 1]
DC Current Gain (VCE = 2.0 V, IC = 5.0 mA)
hFE
100
-
200
-
2
MBC13900 Technical Data
MOTOROLA
For More Information On This Product,
Go to: www.freescale.com
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