MB84VA2006 Просмотр технического описания (PDF) - Fujitsu

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производитель

MB84VA2006

8M (× 8/× 16) FLASH MEMORY & 1M (× 8) STATIC RAM

Fujitsu 

MB84VA2006-10/MB84VA2007-10

s DC CHARACTERISTICS

Parameter Parameter Description

Symbol

Test Conditions

Min. Typ. Max. Unit

ILI Input Leakage Current

—

–1.0

—

+1.0 µA

ILO Output Leakage Current

—

–1.0

—

+1.0 µA

Byte

—

—

22

tCYCLE = 10 MHz

ICC1f

Flash VCC Active Current

(Read)

VCCf = VCC

Max., CEf = VIL

OE = VIH

Word

Byte

—

—

25

mA

—

—

12

tCYCLE = 5 MHz

Word

—

—

15

ICC2f

Flash VCC Active Current

(Program/Erase)

VCCf = VCC Max., CEf

= VIL, OE = VIH

—

—

35 mA

ICC1s

SRAM VCC Active

Current

VCCs = VCC Max.,

tCYCLE =10 MHz

—

—

40 mA

CE1s = VIL, CE2s = VIH tCYCLE = 1 MHz

—

—

12 mA

ICC2s

SRAM VCC Active

Current

CE1s = 0.2 V,

tCYCLE = 10 MHz —

—

35 mA

CE2s = VCCs – 0.2 V,

WE = VCCs – 0.2 V

tCYCLE = 1 MHz

—

—

8 mA

ISB1f

Flash VCC Standby

Current

VCCf = VCC Max., CEf = VCCf ± 0.3 V

RESET = VCCf ± 0.3 V

—

—

5 µA

ISB2f

Flash VCC Standby

Current (RESET)

VCCf = VCC Max., RESET = VSS ± 0.3 V

—

—

5 µA

ISB1s

SRAM VCC Standby

Current

CE1s = VIH or CE2s = VIL

—

—

2 mA

VCCs =

3.0 V

±10%

TA = 25°C

TA = –20 to

+85°C

—

1

2 µA

—

—

35 µA

ISB2s**

SRAM VCC Standby

Current

CE1s = VCC –

0.2 V or CE2s

= 0.2 V

VCCs =

3.3 V

±0.3 V

TA = 25°C

TA = –20 to

+85°C

TA = 25°C

—

2

3 µA

—

—

40 µA

—

—

1 µA

VCCs =

3.0 V

TA = –20 to

+40°C

TA = –20 to

+85°C

—

—

3 µA

—

—

30 µA

VIL Input Low Level

—

–0.3

—

0.6 V

VIH Input High Level

—

2.2

— VCC+0.3* V

VOL

Output Low Voltage

Level

IOL = 2.1 mA,

VCCf = VCCs = VCC Min.

—

—

0.4 V

VOH

Output High Voltage

Level

IOH = –500 µA,

VCCf = VCCs = VCC Min.

VCC – 0.5

—

—V

VLKO

Flash Low VCC Lock-Out

Voltage

—

2.3

—

2.5 V

* : VCC indicate lower of VCCf or VCCs

** :During standby mode with CE1s = VCCS – 0.2 V, CE2s should be CE2s < 0.2V or CE2s > VCCS – 0.2V

11

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