DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

4N32 Просмотр технического описания (PDF) - Isocom

Номер в каталоге
Компоненты Описание
производитель
4N32 Datasheet PDF : 3 Pages
1 2 3
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Output
Forward Voltage (VF)
Reverse Current (I )
R
Collector-emitter Breakdown (BVCEO) 30
Collector-base Breakdown (BVCBO)
50
Emitter-collector Breakdown (BVECO) 5
Collector-emitter Dark Current (I )
CEO
1.2 1.5 V
10 μA
V
V
V
100 nA
IF = 50mA
V =6V
R
IC = 1mA (note 2)
IC = 100μA
IE = 100μA
V = 10V
CE
Coupled
Collector Output Current ( IC ) (Note 2)
4N32, 4N33
50
4N29, 4N30
10
4N31
5
mA
10mA I , 10V V
F
CE
mA
10mA IF , 10V VCE
mA
10mA IF , 10V VCE
Collector-emitter Saturation VoltageVCE(SAT)
4N29,4N30,4N32,4N33
4N31
Input to Output Isolation Voltage VISO 5300
7500
Input-output Isolation Resistance R 5x1010
ISO
Output Turn on Time ton
Output Turn off Time
4N32, 4N33
toff
4N29, 4N30, 4N31
1.0 V
1.2 V
VRMS
VPK
Ω
5 μs
100 μs
40 μs
8mA I , 2mA I
F
C
8mA IF , 2mA IC
(note 1)
(note 1)
V = 500V (note 1)
IO
VCC = 10V, IC= 50mA,
IF = 200mA ,
Pulse Width = 1ms
fig.1
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
IF = 200mA,
Pulse width = 1ms
Input
FIGURE 1
VCC = 10V
Input
ton
I = 50mA
C
tr
Output Output
10%
90%
t
off
tf
10%
90%
28/11/08
DB90048-AAS/A4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]