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ISP626-4 Просмотр технического описания (PDF) - Isocom

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Компоненты Описание
производитель
ISP626-4 Datasheet PDF : 3 Pages
1 2 3
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Power Dissipation
± 50mA
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BV
ECO
Collector Current
Power Dissipation
55V
6V
50mA
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (V )
F
1.0 1.15 1.3 V
I = ± 10mA
F
Output
Collector-emitter Breakdown (BVCEO) 55
( Note 2 )
Emitter-collector Breakdown (BVECO) 6
Collector-emitter Dark Current (ICEO)
Coupled Current Transfer Ratio (CTR) (Note 2) 100
Low Input CTR
50
V
V
100 nA
1200 %
%
Collector-emitter Saturation VoltageVCE (SAT)
0.4 V
0.2
V
Input to Output Isolation Voltage VISO 5300
7500
Input-output Isolation Resistance RISO 5x1010
Rise Time, tr
4
Fall Time, tf
3
VRMS
VPK
Ω
μs
μs
IC = 0.5mA
IE = 100μA
VCE = 24V
± 1mAIF , 0.5V VCE
± 0.5mAIF,1.5V VCE
± 1mAIF , 0.5mAIC
± 1mAIF , 1mAIC
See note 1
See note 1
VIO = 500V (note 1)
VCE = 2V ,
IC= 2mA, RL= 100Ω
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
27/7/10
DB92276m-AAS/A3

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