MAT03 Просмотр технического описания (PDF) - Analog Devices
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MAT03 Datasheet PDF : 12 Pages
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MAT03
WAFER TEST LIMITS (at 25؇C, unless otherwise noted.)
Parameter
Symbol
Conditions
MAT03N
Limits
Units
Breakdown Voltage
Offset Voltage
Current Gain
Current Gain Match
Offset Voltage Change vs. VCB
Offset Voltage Change
vs. Collector Current
Bulk Resistance
Collector Saturation Voltage
BVCEO
VOS
hFE
∆hFE
∆VOS/∆VCB
∆VOS/∆IC
rBE
VCE (SAT)
36
IC = 100 µA, VCB = 0 V
200
10 µA ≤ IC ≤ 1 mA
200
IC = 1 mA, VCB = 0 V, –36 V
80
IC = 10 µA, VCB = 0 V, –36 V
60
IC = 100 µA, VCB = 0 V
6
VCB1 = 0 V, IC = 100 µA
200
VCB2 = –36 V
200
VCB = 0
75
IC1 = 10 µA, IC2 = 1 mA
75
10 µA ≤ IC ≤ 1 mA
0.75
IC = 1 mA, IB = 100 µA
0.1
V min
µV max
µV max
min
min
% max
µV max
µV max
µV max
µV max
Ω max
V max
NOTE:
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
DICE CHARACTERISTICS
1. COLLECTOR (1 )
2. BASE (1 )
3. EMITTER (1 )
4. COLLECTOR (2)
5. BASE (2)
6. EMITTER (2 )
SUBSTRATE CAN BE
CONNECTED TO V– OR
FLOATED
ORDERING GUIDE1
Model
VOS max
Temperature
(TA = +25؇C) Range
MAT03AH2 100 µV
MAT03EH 100 µV
MAT03FH 200 µV
–55°C to +125°C
–40°C to +85°C
–40°C to +85°C
Package
Option
TO-78
TO-78
TO-78
NOTES
1Burn-in is available on industrial temperature range parts.
2For devices processed in total compliance to MIL-STD-883, add/883 after part
number. Consult factory for 883 data sheet.
ABSOLUTE MAXIMUM RATINGS1
Collector-Base Voltage (BVCBO) . . . . . . . . . . . . . . . . . . . . 36 V
Collector-Emitter Voltage (BVCEO) . . . . . . . . . . . . . . . . . . 36 V
Collector-Collector Voltage (BVCC) . . . . . . . . . . . . . . . . . . 36 V
Emitter-Emitter Voltage (BVEE) . . . . . . . . . . . . . . . . . . . . . 36 V
Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Emitter Current (IE) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Total Power Dissipation
Ambient Temperature ≤ 70°C2 . . . . . . . . . . . . . . . . 500 mW
Operating Temperature Range
MAT03A . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C
MAT03E/F . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Operating Junction Temperature . . . . . . . . . . –55°C to +150°C
Storage Temperature . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . +300°C
Junction Temperature . . . . . . . . . . . . . . . . . . –65°C to +150°C
NOTES
1Absolute maximum ratings apply to both DICE and packaged devices.
2Rating applies to TO-78 not using a heat sink, and LCC; devices in free air only. For
TO-78, derate linearly at 6.3 mW/°C above 70°C ambient temperature; for LCC,
derate at 7.8 mW/°C.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the MAT03 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. B
–3–
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