MASWSS0161
High Power GaAs SPDT Switch
DC - 2.0 GHz
Rev. V3
Electrical Specifications 7: TA = +25°C, VDD = +5 V, VC = +5 V / 0 V, PIN = +30 dBm
Parameter
Test Conditions
Units
Min.
Typ.8
Max.
Insertion Loss
DC - 0.5 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
dB
—
0.45
—
dB
—
0.55
0.65
dB
—
0.6
—
Isolation
VSWR
DC - 0.5 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
DC - 2.0 GHz
dB
—
30
—
dB
27
32
—
dB
—
27
—
Ratio
—
1.2:1
—
1 dB Compression
Trise, Tfall
Ton, Toff
Transients
Input Power (5 V Supply/Control) 0.9 GHz
Input Power (8 V Supply/Control) 0.9 GHz
10% to 90% RF, 90% to 10% RF
50% Control to 90% RF, 50% Control to 10% RF
In-Band
dBm
—
33
—
dBm
—
35.8
—
nS
—
30
—
nS
—
35
—
mV
—
12
—
Measured Relative to Input Power, two-tone up to +10 dBm
3rd Order Intercept
(5 V Supply/Control) 0.9 GHz
dBm
—
55
—
(8 V Supply/Control) 0.9 GHz
dBm
—
65
—
Control Current
VC = +5 V
µA
—
—
20
Supply Current
VDD = +5 V
µA
—
—
60
7. All specifications apply when operated with control voltages of 0 V for VC low and 5 to 10 V for VC high, and 50 W impedance at all RF
ports, unless otherwise specified. High power (greater than 1 W) handling specifications apply to cold switching only. For input powers
under 1 W, hot switching can be used. The high control voltage must be within ± 0.2 V of the supply voltage. External DC blocking
capacitors are required on all RF ports.
8. Typical values listed for middle of frequency range noted.
Lead-Free SOIC-8†
† Reference Application Note M538 for lead-free solder reflow recommendations.
2
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