MASWSS0148
GaAs SPST High Isolation Terminated Switch
0.3 - 4.0 GHz
Rev. V1
Electrical Specifications: TA = 25°C, VDD = 5 V, VCTRL = 0 / 5 V, 100 pF capacitors, Z0 = 50 6
Parameter
Insertion Loss7
Isolation
Return Loss
Test Conditions
0.3 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
1.0 GHz
2.0 GHz
3.0 GHz
4.0 GHz
Insertion Loss State, 0.3 - 4.0 GHz
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
Min.
—
—
—
—
50
—
—
—
—
Typ.
1.5
1.6
1.7
1.75
55
55
48
40
17
Max.
1.7
—
—
—
—
—
—
—
—
Input Return Loss
Isolation State
dB
—
20
—
Input 1 dB Compression
—
dBm
—
27
—
Trise, Tfall
10% to 90% RF
90% to 10% RF
µS
—
3
—
µS
—
0.3
—
Ton, Toff
50% Control to 90% RF
50% Control to 10% RF
µS
—
3.5
—
µS
—
0.4
—
Transients
In-Band
mV
—
20
—
Input IP2
2-Tone, 5 MHz spacing, +10 dBm / tone
dBm
—
72
—
Input IP3
2-Tone, 5 MHz spacing, +10 dBm / tone
dBm
—
49
—
Current (ICTRL)
Input Power = 10 dBm
µA
—
1
6
Current (IDD)
Input Power = 10 dBm
µA
—
1
6
6. For positive voltage control, external DC blocking capacitors are required on all RF ports.
7. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 300 MHz - 1 GHz, 39 pF for 0.5 GHz - 4 GHz.
Truth Table 8,9
VCTRL
0
RFin
50 Ω Termination
RFout
Open
1
RFout
RFin
8. Differential voltage, V(state 1) - V(state 0), must be
+2.5 V minimum and must not exceed 8.5 V.
9. 0 = 0 V ± 0.2 V, 1 = VDD = 2.5 V to 8.5 V
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
2
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