MAC8S Просмотр технического описания (PDF) - ON Semiconductor
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MAC8S Datasheet PDF : 7 Pages
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MAC8SD, MAC8SM, MAC8SN
14
12
10
8
Q3
6
Q2
4
2
0
−40 −25
Q1
−10 5 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 7. Typical Gate Trigger Current Versus
Junction Temperature
1
Q1
0.9
Q3
0.8
0.7
0.6
Q3
0.5
Q2
0.4
Q1
0.3
−40 −25 −10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Gate Trigger Voltage Versus
Junction Temperature
200
180
160
VPK = 400 V
140
800 V
120
600 V
100
80
130
TJ = 110°C
120
110
100
90
RG − MT1 = 510 W
TJ = 100°C
110°C
120°C
60
100 200
300 400 500 600 700 800
RGK, GATE−MT1 RESISTANCE (OHMS)
900 1000
Figure 9. Typical Exponential Static dv/dt Versus
Gate−MT1 Resistance, MT2(+)
80
400 450
500 550 600 650 700
VPK, Peak Voltage (Volts)
750 800
Figure 10. Typical Exponential Static dv/dt Versus
Peak Voltage, MT2(+)
130
350
120
110
100
90
RG − MT1 = 510 W
80
VPK = 400 V
600 V
800 V
300
250
200
150
RG − MT1 = 510 W
TJ = 100°C
110°C
70
100
105
110
TJ, Junction Temperature (°C)
Figure 11. Typical Exponential Static dv/dt Versus
Junction Temperature, MT2(+)
100
400 450 500 550 600 650 700 750 800
VPK, Peak Voltage (Volts)
Figure 12. Typical Exponential Static dv/dt Versus
Peak Voltage, MT2(−)
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