MAC8SD(2000) Просмотр технического описания (PDF) - ON Semiconductor
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MAC8SD Datasheet PDF : 8 Pages
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MAC8SD, MAC8SM, MAC8SN
14
12
10
8
Q3
6
Q2
4
2
0
–40 –25
Q1
–10 5 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 7. Typical Gate Trigger Current Versus
Junction Temperature
1
Q1
0.9
Q3
0.8
0.7
0.6
Q3
0.5
Q2
0.4
Q1
0.3
–40 –25 –10 5 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Gate Trigger Voltage Versus
Junction Temperature
200
180
160
VPK = 400 V
140
800 V
120
600 V
100
80
130
TJ = 110°C
120
110
100
90
W RG – MT1 = 510
TJ = 100°C
110°C
120°C
60
100 200 300 400 500 600 700 800 900 1000
RGK, GATE–MT1 RESISTANCE (OHMS)
Figure 9. Typical Exponential Static dv/dt Versus
Gate–MT1 Resistance, MT2(+)
80
400 450
500 550 600 650 700
VPK, Peak Voltage (Volts)
750 800
Figure 10. Typical Exponential Static dv/dt Versus
Peak Voltage, MT2(+)
130
350
120
VPK = 400 V
110
600 V
800 V
100
90
W RG – MT1 = 510
80
300
250
200
W 150 RG – MT1 = 510
TJ = 100°C
110°C
70
100
105
110
TJ, Junction Temperature (°C)
Figure 11. Typical Exponential Static dv/dt Versus
Junction Temperature, MT2(+)
100
400 450 500 550 600 650 700 750 800
VPK, Peak Voltage (Volts)
Figure 12. Typical Exponential Static dv/dt Versus
Peak Voltage, MT2(–)
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