MA649 Просмотр технического описания (PDF) - Panasonic Corporation

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производитель

MA649

Fast Recovery Diodes (FRD)

Panasonic Corporation 

Fast Recovery Diodes (FRD)

MA649

Silicon planer type (cathode common)

For switching

s Features

q High reverse voltage VR

q Low forward voltage VF

q Fast reverse recovery time trr

s Absolute Maximum Ratings (Ta= 25˚C)

Parameter

Symbol

Rating

Unit

Repetitive peak reverse voltage VRRM

200

V

Non-repetitive peak reverse voltage VRSM

200

V

Average forward current

IF(AV)

5

A

Non-repetitive peak forward surge current IFSM*

30

A

Junction temperature

Tj

– 40 to +150 ˚C

Storage temperature

Tstg

– 40 to +150 ˚C

* Sine half wave : 10ms/cycle

MA111

10.0±0.2

5.5±0.2

Unit : mm

4.2±0.2

2.7±0.2

ø3.1±0.1

1.3±0.2

1.4±0.1

0.8±0.1

0.5 +0.2

-0.1

2.54±0.25

5.08±0.5

123

1 : Anode

2 : Cathode

(common)

3 : Anode

TO-220F(a) (TO-220 Full-Pack Package)

s Internal Connection

123

s Electrical Characteristics (Ta= 25˚C)

Parameter

Repetitive peak reverse current

Forward voltage (DC)

Reverse recovery time

Thermal resistance

Symbol

IRRM1

IRRM2

VF

trr*

Rth(j-c)*

Rth(j-a)

Condition

VRRM= 200V, TC= 25˚C

VRRM= 200V, Tj=150˚C

IF= 2.5A, TC= 25˚C

IF=1A, IR=1A

Flat direct current between junction and case

Note 1. Rated input/output frequency : 10MHz

2. * trr measuring circuit

50Ω

50Ω

IF

D.U.T

IR

5.5Ω

min

typ

max

Unit

100

µA

6

mA

1

V

100

ns

3

˚C/W

63

˚C/W

trr

0.1 × IR

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