MA4Z713 Просмотр технического описания (PDF) - Panasonic Corporation
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MA4Z713 Datasheet PDF : 4 Pages
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Schottky Barrier Diodes (SBD)
MA4Z713 (MA4S713)
Silicon epitaxial planar type
For switching
For wave detection
I Features
• Two isolated elements are contained in one package, allowing
high-density mounting
• Low forward voltage VF , optimum for low voltage rectification
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• S-Mini type 4-pin package
2.1±0.1
1.3±0.1
4
3
12
0.3±0.05
5°
Unit: mm
0.7±0.1
0.16+–00..016
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
VR
30
V
Peak reverse voltage
VRM
30
V
Average forward current Single
IFM
150
mA
Double *
110
Forward current (DC) Single
IF
Double *
30
mA
20
Junction temperature
Storage temperature
Note) *: Value per chip
Tj
125
°C
Tstg
−55 to +125
°C
1 : Anode 1
2 : Anode 2
EIAJ : SC-82
3 : Cathode 2
4 : Cathode 1
SMini4-F1 Package
Marking Symbol: M1N
Internal Connection
4
3
1
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
IR
VR = 30 V
1
µA
Forward voltage (DC)
VF1
IF = 1 mA
0.4
V
VF2
IF = 30 mA
1
Terminal capacitance
Ct
VR = 1 V, f = 1 MHz
1.5
pF
Reverse recovery time *
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1
ns
Detection efficiency
η
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
Bias Application Unit N-50BU
3. *: trr measuring instrument
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00109AED
1
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