MA2J728 Просмотр технического описания (PDF) - Panasonic Corporation
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MA2J728 Datasheet PDF : 3 Pages
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Schottky Barrier Diodes (SBD)
MA2J728 (MA728)
Silicon epitaxial planar type
For super high speed switching
For wave detection
I Features
• Low forward voltage VF and good wave detection efficiency η
• Small reverse current IR
• Small temperature coefficient of forward characteristic
• S-Mini type 2-pin package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage (DC)
Peak reverse voltage
Peak forward current
Forward current (DC)
Junction temperature
Storage temperature
VR
30
V
VRM
30
V
IFM
150
mA
IF
30
mA
Tj
125
°C
Tstg
−55 to +125
°C
1.25±0.1
0.35±0.1
Unit: mm
0.7±0.1
1
0 to 0.1
2
0.5±0.1
5°
0.16+–00..016
1 : Anode
2 : Cathode
EIAJ : SC-90A
Marking Symbol: 2A
SMini2-F1 Package
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
Detection efficiency
Symbol
IR
VF1
VF2
Ct
trr
η
Conditions
VR = 30 V
IF = 1 mA
IF = 30 mA
VR = 1 V, f = 1 MHz
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
Min Typ Max Unit
300 nA
0.4
V
1.0
1.5
pF
1.0
ns
65
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Ri = 50 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00014AED
1
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