MA160 Просмотр технического описания (PDF) - Panasonic Corporation
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MA160 Datasheet PDF : 3 Pages
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Switching Diodes
MA4X160 (MA160)
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
• Two isolated elements are contained in one package, allowing
high-density mounting
• Centrosymmetrical wiring, allowing to free from the taping direction
• Short reverse recovery time trr
• Small terminal capacitance Ct
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
VR
40
V
Maximum peak reverse voltage VRM
40
V
Forward current Single
IF(AV)
100
mA
(Average)
Double
75
Repetitive peak Single
IFRM
225
mA
forward current Double
170
Non-repetitive peak Single
IFSM
500
mA
forward surge current * Double
375
Junction temperature
Storage temperature
Note) *: t = 1 s
Tj
150
°C
Tstg
−55 to +150
°C
2.90+–00..0052
1.9±0.2
(0.95) (0.95)
3
4
2
(0.2)
0.60+–00..0150
10˚
0.5R
1
Unit: mm
0.16+–00..016
EAIJ: SC-61
1: Cathode 1
2: Anode 2
3: Cathode 2
4: Anode 1
Mini4-G1 Package
Marking Symbol: M1D
Internal Connection
3
4
2
1
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time *
VF
IF = 100 mA
VR
IR = 100 µA
IR
VR = 35 V
Ct
VR = 0 V, f = 1 MHz
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 IR , RL = 100 Ω
Min Typ Max Unit
0.95 1.20
V
40
V
0.1
µA
0.9 2.0
pF
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2003
SKF00044AED
1
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