29F200-120 Просмотр технического описания (PDF) - Alliance Semiconductor

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29F200-120

5V 256K x 8/128K x 8 CMOS Flash EEPROM

Alliance Semiconductor 

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Item

Erase Suspend

Sector Protect

Ready/Busy

Description

Erase suspend allows interruption of sector erase operations to perform data reads from a sector not

being erased. Erase suspend applies only during sector erase operations, including the time-out

period. Writing an Erase Suspend command during sector erase time-out results in immediate

termination of time-out period and suspension of erase operation.

AS29F200 ignores any commands during erase suspend other than the Reset or Erase Resume

commands. Writing erase resume continues erase operations. Addresses are DON’T CARE when

writing Erase Suspend or Erase Resume commands.

AS29F200 takes 0.2–15 µs to suspend erase operations after receiving Erase Suspend command.

Check completion of erase suspend by polling RY/BY. Check DQ2 in conjunction with DQ6 to

determine if a sector is being erased. AS29F200 ignores redundant writes of erase suspend.

AS29F200 defaults to erase-suspend-read mode while an erase operation has been suspended.

While in erase-suspend-read mode AS29F200 allows reading data from or programming data to

any sector not undergoing sector erase.

Write the Resume command 30h to continue operation of sector erase. AS29F200 ignores

redundant writes of the Resume command. AS29F200 permits multiple suspend/resume

operations during sector erase.

When attempting to write to a protected sector, DATA polling andToggle Bit 1 (DQ6) are activated

for about <1 µs. When attempting to erase a protected sector, DATA polling and

Toggle Bit 1 (DQ6) are activated for about <5 µs. In both cases, the device returns to read mode

without altering the specified sectors.

RY/BY indicates whether an automated on-chip algorithm is in progress (RY/BY = low) or

completed (RY/BY = high). The device does not accept program/erase commands when

RY/BY = low. RY/BY= high when device is in erase suspend mode. RY/BY is an open drain output,

enabling multiple RY/BY pins to be tied in parallel with a pull up resistor to VCC.

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DATA polling (DQ7)

Toggle bit (DQ6)

Exceeding time limit

(DQ5)

Only active during automated on-chip algorithms or sector erase time outs. DQ7 reflects

complement of data last written when read during the automated on-chip algorithm (0 during

erase algorithm); reflects true data when read after completion of an automated on-chip algorithm

(1 after completion of erase agorithm).

Active during automated on-chip algorithms or sector erase time outs. DQ6 toggles when CE or OE

toggles, or an Erase Resume command is invoked. DQ6 is valid after the rising edge of the fourth

pulse of WE during programming; after the rising edge of the sixth WE pulse during chip erase;

after the last rising edge of the sector erase WE pulse for sector erase. For protected sectors, DQ6

toggles for only <1 µs during writes, and <5 µs during erase (if all selected sectors are protected).

Indicates unsuccessful completion of program/erase operation (DQ5 = 1). DATA polling remains

active; CE powers the device down to 2 mA. If DQ5 = 1 during chip erase, all or some sectors are

defective; during byte programming, the entire sector is defective; during sector erase, the sector is

defective (in this case, reset the device and execute a program or erase command sequence to

continue working with functional sectors). Attempting to program 0 to 1 will set DQ5 = 1.

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