29F200-120 Просмотр технического описания (PDF) - Alliance Semiconductor
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29F200-120 Datasheet PDF : 20 Pages
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Parameter
VID rise and fall time
RESET# setup time for temporary sector unprotect
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RESET
CE
WE
RY/BY
tVIDR
Program/erase command sequence
tRSP
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Symbol
All speeds
Unit
tVIDR
500 (min)
ns
tRSP
4 (min)
µs
tVIDR
10V
0 or 1.8V
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Parameter
Symbol Test conditions
9&&# #813±3189
Min
Max
Unit
Input load current
ILI
VIN = VSS to VCC, VCC = VCCMAX
-
±1
µA
A9 Input load current
ILIT
VCC = VCCMAX, A9 = 12.5V
90
µA
Output leakage current
Output short circuit current1
Active current, read @ 6MHz2
Active current, program/erase3
ILO
VOUT = VSS to VCC, VCC = VCCMAX
-
IOS
VOUT = 0.5V
-
ICC
CE = VIL, OE = VIH
-
ICC2
CE = VIL, OE = VIH
-
±1
µA
200
mA
40
mA
60
mA
Standby current (TTL compatible)
ISB1
CE = OE = VIH, VCC = VCCMAX
-
400
µA
Deep power down
ISB2
RP = 0V
-
1
µA
Input low voltage
VIL
-0.5
0.8
V
Input high voltage
VIH
2.0
VCC + 0.3 V
Output low voltage
VOL
IOL = 5.8mA, VCC = VCC MIN
-
0.45
V
Output high level
VOH1 IOH = -2.5 mA, VCC = VCC MIN
2.4
-
V
VOH2 IOH = -100 µA, VCC = VCC MIN
VCC - 0.4 -
V
Low VCC lock out voltage
VLKO
2.8
4.2
V
Input HV select voltage
Vh
11.5
12.5
V
1 Not more than one output tested simultaneously. Duration of the short circuit must not be >1 second. OUT = 0.5V was selected to avoid test problems
caused by tester ground degradation. (This parameter is sampled and not 100% tested, but guaranteed by characterization.)
2 The ICC current listed includes both the DC operating current and the frequency dependent component (@ 6 MHz). The frequency componenttypically
is less than 2 mA/MHz with OE at VIH.
3 ICC active while program or erase operations are in progress.
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Rising input
Falling input
Undefined output/don’t care
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