HMBT1015 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics

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производитель

HMBT1015

PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6804

Issued Date : 1992.08.25

Revised Date : 2002.10.25

Page No. : 2/3

Current Gain & Collector Current

1000

125oC

75oC

25oC

100

hFE @ VCE=6V

Saturation Voltage & Collector Current

1000

VCE(sat) @ IC=10IB

75oC

100

125oC

25oC

10

0.1

1

10

100

Collector Current-IC (mA)

1000

10000

Saturation Voltage & Collector Current

VBE(sat) @ IC=10IB

1000

75oC

25oC

125oC

100

0.1

1

10

100

Collector Current-IC (mA)

1000

Cutoff Frequency & Collector Current

1000

VCE=10

100

10

10

0.1

1

10

100

Collector Current-IC (mA)

1000

Capacitance & Reverse-Biased Voltage

10.00

Cob

1.00

0.1

1

10

100

Reverse-Biased Voltage (V)

Safe Operating Area

1

PT=1ms

PT=1s

0.1

PT=100ms

1

1

HMBT1015

10

100

Collector Current (mA)

1000

0.01

1

10

100

Forward-Biased Voltage-VCE (V)

HSMC Product Specification

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