HMBT1815 Просмотр технического описания (PDF) - Hi-Sincerity Microelectronics

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производитель

HMBT1815

NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Microelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6805

Issued Date : 1992.08.25

Revised Date : 2002.10.25

Page No. : 2/3

10000

Current Gain & Collector Current

1000

100

125oC

25oC

75oC

hFE @ VCE=6V

10

0.1

1

10

100

Collector Current-IC (mA)

1000

Saturation Voltage & Collector Current

1000

VCE(sat) @ IC=10IB

100

10

0.1

125oC

75oC

25oC

1

10

100

Collector Current-IC (mA)

1000

10000

Saturation Voltage & Collector Current

VBE(sat) @ IC=10IB

Capacitance & Reverse-Biased Voltage

10

1000

100

0.1

25oC

75oC

125oC

1

10

100

Collector Current-IC (mA)

1000

Cutoff FreSqaufeenOcpyer&atiCngoAllerecator Current

10010

PT=1ms

PT=100ms

VCE=10V

PT=1s

100.10

Cob

1

0.1

1

0.1

1

10

100

Reverse-Biased Voltage (V)

Safe Operating Area

PT=100ms

PT=1s

PT=1ms

0.0110

11

0.01

1100

110000

1

FCorowllaercdtoVroCltaugrere-VnCt E(m(VA))

HMBT1815

10

100

Forward Voltage-VCE (V)

HSMC Product Specification

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