76105DK8 Просмотр технического описания (PDF) - Fairchild Semiconductor

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76105DK8

5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

Fairchild Semiconductor 

HUF76105DK8

Typical Performance Curves (Continued)

25

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDD = 15V

20

15

-55oC

25oC

150oC

10

5

0

0

1

2

3

4

5

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 7. TRANSFER CHARACTERISTICS

25

VGS = 10V

VGS = 5V

20

VGS = 4V

15

VGS = 3.5V

10

VGS = 3V

5

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

0

TA = 25oC

0

1

2

3

4

5

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 8. SATURATION CHARACTERISTICS

110

ID = 5A

90

PULSE DURATION = 250µs

DUTY CYCLE = 0.5% MAX

70

ID = 1.4A

50

30

2

4

6

8

10

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.8 PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

1.6 VGS = 10V, ID = 5A

1.4

1.2

1.0

0.8

0.6

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1.2

VGS = VDS, ID = 250µA

1.1

1.0

0.9

0.8

0.7

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

©2003 Fairchild Semiconductor Corporation

1.15

1.1

ID = 250µA

1.05

1.0

0.95

0.9

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

HUF76105DK8 Rev. B1

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