76105DK8 Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
76105DK8
Fairchild Semiconductor
76105DK8 Datasheet PDF : 12 Pages
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HUF76105DK8
Electrical Specifications TA = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
VDD = 15V, ID ≅ 5A,
-
Turn-On Delay Time
td(ON)
RL = 3Ω, VGS = 10V,
RGS = 27Ω
-
Rise Time
tr
(Figure 16)
-
Turn-Off Delay Time
td(OFF)
-
Fall Time
tf
-
Turn-Off Time
tOFF
-
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Qg(TOT) VGS = 0V to 10V VDD = 15V, ID ≅ 1.4A,
-
Qg(5)
VGS = 0V to 5V
RL = 10.7Ω
Ig(REF) = 1.0mA
-
Qg(TH) VGS = 0V to 1V (Figure 14)
-
Qgs
-
Qgd
-
Input Capacitance
Output Capacitance
CISS
VDS = 25V, VGS = 0V,
-
f = 1MHz
COSS (Figure 13)
-
Reverse Transfer Capacitance
CRSS
-
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage
VSD
ISD = 5A
-
ISD = 1.4A
Reverse Recovery Time
trr
ISD = 1.4A, dISD/dt = 100A/µs
-
Reverse Recovered Charge
QRR
ISD = 1.4A, dISD/dt = 100A/µs
-
TYP
-
17
21
60
20
-
9
5.3
0.35
1.00
2.40
325
180
35
TYP
-
-
-
MAX UNITS
60
ns
-
ns
-
ns
-
ns
-
ns
120
ns
11
nC
6.4
nC
0.45
nC
-
nC
-
nC
-
pF
-
pF
-
pF
MAX
1.25
1.00
39
42
UNITS
V
V
ns
nC
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
©2003 Fairchild Semiconductor Corporation
6
5
VGS = 10V, RθJA = 50oC/W
4
3
2
1
VGS = 4.5V, RθJA = 228oC/W
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
HUF76105DK8 Rev. B1
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