76105DK8 Просмотр технического описания (PDF) - Fairchild Semiconductor

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Компоненты Описание

производитель

76105DK8

5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

Fairchild Semiconductor 

HUF76105DK8

Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified

HUF76105DK8

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

Drain Current

Continuous

Continuous

Continuous

(TA=

(TA=

(TA=

211500o00CooCC, V,, VVGGGSSS===1540V.V5))V(()FN(iogNtueorte3e)23).)

(Note

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ID

ID

ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Power Dissipation (Note 2)

Derate Above 25oC . . . .

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Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

30

30

±20

5

1.4

1.3

Figure 4

Figures 6, 17, 18

2.5

0.02

-55 to 150

300

260

V

V

V

A

A

A

W

W/oC

oC

oC

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 125oC.

2. 50oC/W measured using FR-4 board at 1 second.

3. 228oC/W measured using FR-4 board with 0.006 in2 of copper at 1000 seconds.

Electrical Specifications TA = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

ON STATE SPECIFICATIONS

BVDSS

IDSS

IGSS

ID = 250µA, VGS = 0V (Figure 12)

VDS = 25V, VGS = 0V

VDS = 25V, VGS = 0V, TC = 150oC

VGS = ±20V

Gate to Source Threshold Voltage

Drain to Source On Resistance

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Ambient

VGS(TH)

rDS(ON)

VGS = VDS, ID = 250µA (Figure 11)

ID = 5A, VGS = 10V (Figures 9, 10)

ID = 1.4A, VGS = 5V (Figure 9)

ID = 1.3A, VGS = 4.5V (Figure 9)

RθJA

Pad Area = 0.76 in2 (Note 2)

Pad Area = 0.027 in2 (See TB377)

Pad Area = 0.006 in2 (See TB377)

SWITCHING SPECIFICATIONS (VGS = 4.5V)

Turn-On Time

tON

Turn-On Delay Time

td(ON)

Rise Time

tr

Turn-Off Delay Time

td(OFF)

Fall Time

tf

Turn-Off Time

tOFF

VDD = 15V, ID ≅ 1.3A,

RL = 11.5Ω, VGS = 4.5V,

RGS = 27Ω

(Figure 15)

MIN

TYP

MAX UNITS

30

-

-

V

-

-

1

µA

-

-

250

µA

-

-

±100

nA

1

-

3

V

-

0.040 0.050

Ω

-

0.055 0.072

Ω

-

0.060 0.078

Ω

-

-

50

oC/W

-

-

191

oC/W

-

-

228

oC/W

-

-

60

ns

-

12

-

ns

-

28

-

ns

-

31

-

ns

-

21

-

ns

-

-

80

ns

©2003 Fairchild Semiconductor Corporation

HUF76105DK8 Rev. B1

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