M5M5V216ATP-55H Просмотр технического описания (PDF) - Mitsumi
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M5M5V216ATP-55H Datasheet PDF : 7 Pages
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revision-01, ' 98.12.08
M5M5V216ATP,RT
MITSUBISHI LSIs
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Vcc (PD) Power down supply voltage
VI (BC) Byte control input BC1 & BC2
VI (S)
Chip select input S
Icc (PD)
Power down
supply current
Vcc=3.0V
1)
BC1 and
S<= 0.2V
BC2
>=Vcc
-
0.2V
other inputs=0~3V
2)
S>= Vcc - 0.2V
other inputs=0~3V
-LW, -LI
-L, -LW, -LI
-HW, -HI
-H, -HW, -HI
-H
-HW
-HI
+70 ~ +85 C
+70 C
+70 ~ +85 C
+40 ~ +70 C
+25 ~ +40 C
0 ~ +25 C
-20 ~ +25 C
-40 ~ +25 C
(2) TIMING REQUIREMINTS
Symbol
Parameter
tsu (PD)
trec (PD)
Power down set up time
Power down recovery time
Test conditions
Limits
Min Typ Max
2.0
2.0
2.0
-
-
50
-
-
20
-
-
24
-
-
8
-
1
3
-
0.3 1
-
0.3 1
-
0.3 1
Units
V
V
V
µA
µA
µA
µA
µA
µA
µA
µA
Typical value is for Ta=25 C
Limits
Min Typ Max
0
5
Units
ns
ms
(3) TIMING DIAGRAM
BC control mode
Vcc
BC1
BC2
2.2V
tsu (PD)
2.7V
2.7V
BC1 , BC2 >=Vcc - 0.2V
trec (PD)
2.2V
S control mode
Vcc
tsu (PD)
2.2V
S
2.7V
2.7V
S >= Vcc - 0.2V
trec (PD)
2.2V
MITSUBISHI ELECTRIC
7
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