M48T559 Просмотр технического описания (PDF) - STMicroelectronics
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M48T559 Datasheet PDF : 18 Pages
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M48T559Y
Table 7. Power Down/Up Trip Points DC Characteristics (1)
(TA = 0 to 70 °C)
Symbol
Parameter
Min
Typ
Max
Unit
VPFD Power-fail Deselect Voltage
4.2
4.35
4.5
V
VSO
Battery Back-up Switchover Voltage
3.0
V
tDR (2) Expected Data Retention Time
7
Note: 1. All voltages referenced to VSS.
2. At 25°C.
YEARS
Table 8. Power Down/Up AC Characteristics
(TA = 0 to 70 °C)
Symbol
Parameter
Min
Max
Unit
tPD
E at VIH before Power Down
0
µs
tF (1)
VPFD (max) to VPFD (min) VCC Fall Time
300
µs
tFB (2)
VPFD (min) to VSS VCC Fall Time
10
µs
tR
VPFD (min) to VPFD (max) VCC Rise Time
10
µs
tRB
VSS to VPFD (min) VCC Rise Time
1
µs
tREC
VPFD (max) to RST High
40
200
ms
Note: 1. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after VCC pass-
es VPFD (min).
2. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
Figure 5. Power Down/Up Mode AC Waveforms
VCC
VPFD (max)
VPFD (min)
VSO
tF
tFB
tPD
RST
INPUTS
RECOGNIZED
OUTPUTS
VALID
(PER CONTROL INPUT)
tDR
tR
tRB
tREC
DON'T CARE
HIGH-Z
RECOGNIZED
VALID
(PER CONTROL INPUT)
AI01384D
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