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M48T201Y-85MH1(2004) Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание
производитель
M48T201Y-85MH1
(Rev.:2004)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M48T201Y-85MH1 Datasheet PDF : 33 Pages
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M48T201Y, M48T201V
READ Mode
The M48T201Y/V executes a READ Cycle when-
ever W (WRITE Enable) is high and E (Chip En-
able) is low. The unique address specified by the
address inputs (A0-A18) defines which one of the
on-chip TIMEKEEPER® registers or external
SRAM locations is to be accessed. When the ad-
dress presented to the M48T201Y/V is in the
range of 7FFFFh-7FFF0h, one of the on-board
TIMEKEEPER registers is accessed and valid
data will be available to the eight data output driv-
ers within tAVQV after the address input signal is
stable, providing that the E and G access times
are also satisfied. If they are not, then data access
must be measured from the latter occurring signal
(E or G) and the limiting parameter is either tELQV
for E or tGLQV for G rather than the address access
time. When one of the on-chip TIMEKEEPER reg-
isters is selected for READ, the GCON signal will
remain inactive throughout the READ Cycle.
When the address value presented to the
M48T201Y/V is outside the range of TIMEKEEP-
ER registers, an external SRAM location will be
selected. In this case the G signal will be passed
to the GCON pin, with the specified delay times of
tAOEL or tOERL.
Figure 5. GCON Timing When Switching Between RTC and External SRAM
ADDRESS 7FFF0h - 7FFFFh
RTC
G
00000h - 7FFEFh
External SRAM
GCON
E
tAOEL
7FFF0h - 7FFFFh
RTC
00000h - 7FFEFh
External SRAM
tAOEH tOERL
tRO
AI02333
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