M48T35Y-70MH1 Просмотр технического описания (PDF) - STMicroelectronics
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M48T35Y-70MH1 Datasheet PDF : 18 Pages
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M48T35, M48T35Y
Table 5. Capacitance (1, 2)
(TA = 25 °C)
Symbol
Parameter
CIN
Input Capacitance
CIO (3) Input / Output Capacitance
Note: 1. Effective capacitance measured with power supply at 5V.
2. Sampled only, not 100% tested.
3. Outputs deselected.
Test Condition
VIN = 0V
VOUT = 0V
Min
Max
Unit
10
pF
10
pF
Table 6. DC Characteristics
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 4.75V to 5.5V or 4.5V to 5.5V)
Symbol
Parameter
Test Condition
ILI (1)
Input Leakage Current
0V ≤ VIN ≤ VCC
ILO (1) Output Leakage Current
0V ≤ VOUT ≤ VCC
ICC
Supply Current
Outputs open
ICC1
Supply Current (Standby) TTL
E = VIH
ICC2
Supply Current (Standby) CMOS
E = VCC – 0.2V
VIL (2) Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 2.1mA
VOH
Output High Voltage
IOH = –1mA
Note: 1. Outputs deselected.
2. Negative spikes of –1V allowed for up to 10ns once per cycle.
Min
–0.3
2.2
2.4
Max
Unit
±1
µA
±5
µA
50
mA
3
mA
3
mA
0.8
V
VCC + 0.3
V
0.4
V
V
Table 7. Power Down/Up Trip Points DC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C)
Symbol
Parameter
Min
Typ
Max
VPFD Power-fail Deselect Voltage
M48T35
4.5
M48T35Y
4.2
4.6
4.75
4.35
4.5
VSO
Battery Back-up Switchover Voltage
3.0
tDR
Expected Data Retention Time
(at 25°C)
Grade 1
Grade 6
10 (2)
10 (3)
Note: 1. All voltages referenced to VSS.
2. CAPHAT and M4T32-BR12SH1 SNAPHAT only, M4T28-BR12SH1 SNAPHAT top tDR = 7 years (typ).
3. Using larger M4T32-BR12SH6 SNAPHAT top (recommended for Industrial Temperature Range - grade 6 device).
Unit
V
V
V
YEARS
YEARS
5/18
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