M40Z300MH1TR(2000) Просмотр технического описания (PDF) - STMicroelectronics

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производитель

M40Z300MH1TR
(Rev.:2000)

NVRAM CONTROLLER for up to EIGHT LPSRAM

STMicroelectronics 

M40Z300, M40Z300W

Figure 7. Address-Decode Time

A, B

E

E1CON-E4CON

tAS

tEDL

tEDH or tEDL

AI02551

Note: During system design, compliance with the SRAM timing parameters must comprehend the propagation delay

between E and EXCON

Table 8. Battery Table

Part Number

M4Z28-BR00SH

M4Z32-BR00SH

Description

Lithium Battery (48mAh) SNAPHAT

Lithium Battery (120mAh) SNAPHAT

Package

SH

SH

VCC NOISE AND NEGATIVE GOING TRANSIENTS

ICC transients, including those produced by output

switching, can produce voltage fluctuations, re-

sulting in spikes on the VCC bus. These transients

can be reduced if capacitors are used to store en-

ergy, which stabilizes the VCC bus. The energy

stored in the bypass capacitors will be released as

low going spikes are generated or energy will be

absorbed when overshoots occur.

A ceramic bypass capacitor value of 0.1µF (as

shown in figure 8) is recommended in order to pro-

vide the needed filtering.

In addition to transients that are caused by normal

SRAM operation, power cycling can generate neg-

ative voltage spikes on VCC that drive it to values

below VSS by as much as one volt. These negative

spikes can cause data corruption in the SRAM

while in battery backup mode. To protect from

these voltage spikes, STMicroelectronics recom-

mends connecting a schottky diode from VCC to

VSS (cathode connected to VCC, anode to VSS).

Schottky diode 1N5817 is recommended for

through hole and MBRS120T3 is recommended

for surface mount.

Figure 8. Supply Voltage Protection

VCC

0.1µF

VCC

DEVICE

VSS

AI00622

10/16

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