FEATURES SUMMARY
s SUPPLY VOLTAGE
– VCC = 5V ±10% for PROGRAM, ERASE and
READ OPERATIONS
s ACCESS TIME: 55, 70, 90ns
s PROGRAMMING TIME
– 10µs per Byte typical
s 16 UNIFORM 64Kbyte MEMORY BLOCKS
s PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithms
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s TEMPORARY BLOCK UNPROTECTION
MODE
s COMMON FLASH INTERFACE
– 64 bit Security Code
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: F1h
M29F080D
8 Mbit (1Mb x8, Uniform Block)
5V Supply Flash Memory
PRELIMINARY DATA
Figure 1. Packages
TSOP40 (N)
10 x 20mm
SO44 (M)
April 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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