M28F201-120XN6TR Просмотр технического описания (PDF) - STMicroelectronics
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M28F201-120XN6TR Datasheet PDF : 21 Pages
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Table 6. AC Measurement Conditions
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
SRAM Interface Levels
≤ 10ns
0 to 3V
1.5V
M28F201
EPROM Interface Levels
≤ 10ns
0.45V to 2.4V
0.8V and 2V
Figure 3. AC Testing Input Output Waveform
SRAM Interface
3V
0V
EPROM Interface
2.4V
0.45V
1.5V
2.0V
0.8V
AI01275
Figure 4. AC Testing Load Circuit
1.3V
1N914
DEVICE
UNDER
TEST
3.3kΩ
OUT
CL = 30pF or 100pF
CL = 30pF for SRAM Interface
CL = 100pF for EPROM Interface
CL includes JIG capacitance
AI01276
Table 7. Capacitance (1) (TA = 25 °C, f = 1 MHz )
Symbol
Parameter
Test Condition
CIN
Input Capacitance
VIN = 0V
COUT
Output Capacitance
Note: 1. Sampled only, not 100% tested.
VOUT = 0V
Min
Max
Unit
6
pF
12
pF
Read Mode. The Read Mode is the default at
power up or may be set-up by writing 00h to the
command register. Subsequent read operations
output data from the memory. The memory remains
in the Read Mode until a new command is written
to the command register.
Electronic Signature Mode. In order to select the
correct erase and programming algorithms for on-
board programming, the manufacturer and device
codes may be read directly. It is not neccessary to
apply a high voltage to A9 when using the com-
mand register. The Electronic Signature Mode is
set-up by writing 80h or 90h to the command
register. The following read cycles, with address
inputs 00000h or 00001h, output the manufacturer
or device codes. The command is terminated by
writing another valid command to the command
register (for example Reset).
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