M28C16-200K1T Просмотр технического описания (PDF) - STMicroelectronics

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M28C16-200K1T

16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION

STMicroelectronics 

M28LV16

16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM

with SOFTWARE DATA PROTECTION

FAST ACCESS TIME: 200ns

SINGLE LOW VOLTAGE OPERATION

LOW POWER CONSUMPTION

FAST WRITE CYCLE:

– 64 Bytes Page Write Operation

– Byte or Page Write Cycle: 3ms Max

ENHANCED END OF WRITE DETECTION:

– Data Polling

– Toggle Bit

PAGE LOAD TIMER STATUS BIT

HIGH RELIABILITY SINGLE POLYSILICON,

CMOS TECHNOLOGY:

– Endurance >100,000 Erase/Write Cycles

– Data Retention >40 Years

JEDEC APPROVED BYTEWIDE PIN OUT

SOFTWARE DATA PROTECTION

M28LV16 is replaced by the products

described on the document M28C16A

DESCRIPTION

The M28LV16 is a 2K x 8 low power Parallel

EEPROM fabricatedwith SGS-THOMSON proprie-

tary single polysilicon CMOS technology. The de-

vice offers fast access time with low power

dissipation and requires a 2.7V to 3.6V power

supply. The circuit has been designed to offer a

flexible microcontroller interface featuring both

hardware and software handshaking with Data

Polling and Toggle Bit. The M28LV16 supports 64

byte page write operation. A Software Data Protec-

tion (SDP) is also possible using the standard

JEDEC algorithm.

Table 1. Signal Names

A0 - A10

DQ0 - DQ7

W

E

G

RB

VCC

VSS

Address Input

Data Input / Output

Write Enable

Chip Enable

Output Enable

Ready / Busy

Supply Voltage

Ground

NOT FOR NEW DESIGN

24

1

PDIP24 (P)

24

1

SO24 (MS)

300 mils

PLCC32 (K)

TSOP28 (N)

8 x 13.4mm

Figure 1. Logic Diagram

VCC

11

A0-A10

8

DQ0-DQ7

W

M28LV16

E

RB *

G

VSS

AI01567B

Note: * RB function is offered only with TSOP28 package.

November 1997

This is information on a product still in production bu t not recommended for new de sign.

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