M25P20 Просмотр технического описания (PDF) - STMicroelectronics

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M25P20

2 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface

STMicroelectronics 

Revision history

13 Revision history

M25P20

Table 24. Document revision history

Date

Revision

Changes

12-Apr-2001 1.0 Document written

25-May-2001

11-Sep-2001

16-Jan-2002

16-May-2002

12-Sep-2002

1.1 Serial Paged Flash Memory renamed as Serial Flash Memory

Changes to text: Signal Description/Chip Select; Hold Condition/1st para;

Protection modes; Release from Power-down and Read Electronic

Signature (RES); Power-up

1.2 Repositioning of several tables and illustrations without changing their

contents

Power-up timing illustration; SO8W package removed

Changes to tables: Abs Max Ratings/VIO; DC Characteristics/VIL

FAST_READ instruction added. Document revised with new timings, VWI,

1.3

ICC3 and clock slew rate. Descriptions of Polling, Hold Condition, Page

Programming, Release for Deep Power-down made more precise. Value

of tW(max) modified.

Clarification of descriptions of entering Standby Power mode from Deep

1.4 Power-down mode, and of terminating an instruction sequence or data-

out sequence.

1.5 VFQFPN8 package (MLP8) added. Document promoted to full datasheet.

13-Dec-2002

Typical Page Program time improved. Write Protect setup and hold times

1.6

specified, for applications that switch Write Protect to exit the Hardware

Protection mode immediately before a WRSR, and to enter the Hardware

Protection mode again immediately after.

24-Nov-2003

Table of contents, warning about exposed paddle on MLP8, and Pb-free

options added.

2.0 40MHz AC Characteristics table included as well as 25MHz. ICC3(max),

tSE(typ) and tBE(typ) values improved. Change of naming for VDFPN8

package

26-Apr-2004

05-Aug-2004

21-Dec-2004

01-Aug-2005

3.0

Automotive range added. Soldering temperature information clarified for

RoHS compliant devices. Device Grade clarified

4.0

Device Grade information clarified. Data-retention measurement

temperature corrected. Details of how to find the date of marking added.

5.0

2 Notes removed from Table 23: Ordering Information Scheme. Small text

changes. End timing line of tSHQZ modified in Figure 25: Output Timing.

Updated Page Program (PP) instructions in Page Programming, Page

6.0 Program (PP), Instruction Times (Device Grade 6) and Instruction Times

(Device Grade 3).

48/50

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