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LTC690 Просмотр технического описания (PDF) - Linear Technology

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LTC690
Linear
Linear Technology Linear
LTC690 Datasheet PDF : 18 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
LTC690/LTC691
LTC694/LTC695
APPLICATIONS INFORMATION
external PNP transistor (Figure 2). If higher currents
are needed with the LTC690 and LTC694, a high current
Schottky diode can be connected from the VCC pin to the
VOUT pin to supply the extra current.
ANY PNP POWER TRANSISTOR
5V
0.1μF
3V
5
3
BATT ON
VCC
VOUT
2
LTC691
1 LTC695
VBATT
GND
4
0.1μF
690 F02
Figure 2. Using BATT ON to Drive External PNP Transistor
The LTC690 family is protected for safe area operation
with short-circuit limit. Output current is limited to
approximately 200mA. If the device is overloaded for
long period of time, thermal shutdown turns the power
switch off until the device cools down. The threshhold
temperature for thermal shutdown is approximately 155°C
with about 10°C of hysteresis which prevents the device
from oscillating in and out of shutdown.
The PNP switch used in competitive devices was not chosen
for the internal power switch because it injects unwanted
current into the substrate. This current is collected by the
VBATT pin in competitive devices and adds to the charging
current of the battery which can damage lithium batteries.
The LTC690 family uses a charge pumped NMOS power
switch to eliminate unwanted charging current while
achieving low dropout and low supply current. Since no
current goes to the substrate, the current collected by
VBATT pin is strictly junction leakage.
A 125Ω PMOS switch connects the VBATT input to VOUT
in battery back-up mode. The switch is designed for very
low dropout voltage (input-to-output differential). This
feature is advantageous for low current applications such
as battery back-up in CMOS RAM and other low power
CMOS circuitry. The supply current in battery back-up
mode is 1μA maximum.
The operating voltage at the VBATT pin ranges from 2.0V
to 4.25V. High value capacitors, such as electrolytic or
farad-size double layer capacitors, can be used for short
term memory back-up instead of a battery. The charging
resistor for both capacitors and rechargeable batteries
should be connected to VOUT since this eliminates the
discharge path that exists when the resistor is connected
to VCC (Figure 3).
I
=
VOUT
– VBATT
R
5V
0.1μF
3V
R
VCC
VOUT
LTC690
LTC691
LTC694
LTC695
VBATT
GND
0.1μF
690 F03
Figure 3. Charging External Battery Through VOUT
Replacing the Back-Up Battery
When changing the back-up battery with system power
on, spurious resets can occur while battery is removed
due to battery standby current. Although battery standby
current is only a tiny leakage current, it can still charge
up the stray capacitance on the VBATT pin. The oscillation
cycle is as follows: When VBATT reaches within 50mV of
VCC, the LTC690 switches to battery back-up. VOUT pulls
VBATT low and the device goes back to normal operation.
The leakage current then charges up the VBATT pin again
and the cycle repeats.
If spurious resets during battery replacement pose no
problems, then no action is required. Otherwise, a resistor
from VBATT to GND will hold the pin low while changing
the battery. For example, the battery standby current is
1μA maximum over temperature and the external resistor
required to hold VBATT below VCC is:
RVCC –50mV
1μA
With VCC = 4.5V, a 4.3M resistor will work. With a 3V
battery, this resistor will draw only 0.7μA from the battery,
which is negligible in most cases.
690fe
10

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