RFG50N05L Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
RFG50N05L Datasheet PDF : 6 Pages
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Typical Performance Curves
RFG50N05L, RFP50N05L
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
ID MAX CONTINUOUS
10
OPERATION IN THIS
AREA LIMITED
BY rDS(ON)
1
TC = 25oC
TJ = MAX RATED
DC OPERATION
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
1000
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R = 0
TAV = (L/R) IN [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
IDM
100
STARTING TJ = 25oC
STARTING TJ = 150oC
10
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING SAFE
OPERATING AREA
140
120 VGS = 10V
100
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
VGS = 5V
TC - 25oC
VGS = 4V
60
40
VGS = 3V
20
0
0
VGS = 2V
1.5
3.0
4.5
6.0
7.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. SATURATION CHARACTERISTICS
140
PULSE DURATION = 80µs
120
DUTY CYCLE = 0.5% MAX.
TC - 25oC
100
VDS = 15V
80
-55oC
25oC
60
150oC
40
20
0
0
1.5
3.0
4.5
6.0
7.5
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. TRANSFER CHARACTERISTICS
©2002 Fairchild Semiconductor Corporation
RFG50N05L, RFP50N05L Rev. B
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