LTC3416 Просмотр технического описания (PDF) - Linear Technology
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LTC3416 Datasheet PDF : 16 Pages
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LTC3416
APPLICATIO S I FOR ATIO
VOUT2
R5
SLAVE
R4
VFB
LTC3416
R3
SGND
MASTER
TRACK
VFB
LTC3416
SGND
VOUT1
R2
R1
3416 F05
Figure 5. Dual Voltage System with Tracking
Soft-Start
The RUN/SS pin provides a means to shut down the
LTC3416 as well as a timer for soft-start. Pulling the RUN/
SS pin below 0.5V places the LTC3416 in a low quiescent
current shutdown state (IQ < 1µA).
The soft-start gradually raises the clamp on ITH. The full
current range becomes available on ITH after the voltage
on ITH reaches approximately 2V. The clamp on ITH is set
externally with a resistor and capacitor on the RUN/SS pin
as shown in Figure 1a. The soft-start duration can be
calculated by using the following formula:
tSS
=
RSSCSSIn
VIN
VIN
– 1.8V
(Seconds)
Efficiency Considerations
The efficiency of a switching regulator is equal to the
output power divided by the input power times 100%. It is
often useful to analyze individual losses to determine what
is limiting the efficiency and which change would produce
the most improvement. Efficiency can be expressed as:
Efficiency = 100% – (L1 + L2 + L3 + ...)
where L1, L2, etc. are the individual losses as a percentage
of input power.
Although all dissipative elements in the circuit produce
losses, two main sources usually account for most of the
losses: VIN quiescent current and I2R losses.
The VIN quiescent current loss dominates the efficiency
loss at very low load currents whereas the I2R loss
dominates the efficiency loss at medium to high load
currents. In a typical efficiency plot, the efficiency curve at
very low load currents can be misleading since the actual
power lost is of no consequence.
1. The VIN quiescent current is due to two components:
the DC bias current as given in the electrical character-
istics and the internal main switch and synchronous
switch gate charge currents. The gate charge current
results from switching the gate capacitance of the
internal power MOSFET switches. Each time the gate is
switched from high to low to high again, a packet of
charge dQ moves from VIN to ground. The resulting
dQ/dt is the current out of VIN that is typically larger
than the DC bias current. In continuous mode, IGATECHG
= f(QT + QB) where QT and QB are the gate charges of
the internal top and bottom switches. Both the DC bias
and gate charge losses are proportional to VIN and thus
their effects will be more pronounced at higher supply
voltages.
2. I2R losses are calculated from the resistances of the
internal switches, RSW, and external inductor RL. In
continuous mode the average output current flowing
through inductor L is “chopped” between the main
switch and the synchronous switch. Thus, the series
resistance looking into the SW pin is a function of both
top and bottom MOSFET RDS(ON) and the duty cycle
(DC) as follows:
RSW = (RDS(ON)TOP)(DC) + (RDS(ON)BOT)(1 – DC)
The RDS(ON) for both the top and bottom MOSFETs can
be obtained from the Typical Performance Characteris-
tics curves. Thus, to obtain I2R losses, simply add RSW
to RL and multiply the result by the square of the
average output current.
Other losses including CIN and COUT ESR dissipative
losses and inductor core losses generally account for less
than 2% of the total loss.
In most applications, the LTC3416 does not dissipate
much heat due to its high efficiency. But in applications
where the LTC3416 is running at high ambient tempera-
ture with low supply voltage and high duty cycles, such as
3416f
11
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