VUM33-05N Просмотр технического описания (PDF) - IXYS CORPORATION
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VUM33-05N Datasheet PDF : 4 Pages
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VUM 33-05
80
A
70
60
ID 50
40
10 V
7V
6V
30
VGS= 5 V
20
10
0
0
2
4
6
8 V 10
VDS
Fig. 3 Typ. output characteristic
ID = f (VDS) (MOSFET)
80
A
70
60
ID 50
40
30
TVJ = 25°C
TVJ = 125°C
20
10
0
2
3
4
5
6 V7
VGS
Fig. 4 Typ. transfer characteristics
ID = f (VGS) (MOSFET)
2.5
RDS(on) ID=18A
2.0
norm.
1.5
1.0
0.5
0.0
-50
0
50
TVJ
100 °C 150
Fig. 5 Typ. normalized
RDS(on) = f (TVJ) (MOSFET)
1.4
BVDSS
VGS(th)
1.2
1.0
norm.
0.8
VGS(th)
VDSS
0.6
0.4
-50
0
50
TVJ
100 °C 150
Fig. 6 Typ. normalized BV = f (T )
DSS
VJ
VGS(th) = f (TVJ) (MOSFET)
80
s
60
gfs
40
20
0
0 20 40 60 80 A 100
ID
Fig. 9 Typ. transconductance,
gfs = f (ID) (MOSFET)
12
V
10
8
VGS
6
4
VDS= 250 V
ID = 18 A
IG = 10 mA
100
nF
Ciss
10
C
1
Coss
2
0
0
100 200 300 nC 400
Qg
Fig. 7 Typ. turn-on gate charge
characteristics, VGS = f (Qg) (MOSFET)
120
A
100
80
IF
60
40
TVJ=150°C
TVJ=100°C
TVJ= 25°C
Crss
0.1
0
5
10
15 V 20
VDS
Fig. 8 Typ. capacitances C = f (V ),
DS
f = 1 MHz (MOSFET)
3.0
µC TVJ=100°C
2.5 VR= 350 V
Qrr 2.0
1.5
1.0
IF = 37 A
IF = 74 A
IF = 37 A
IF = 18.5 A
max.
20
0
0.5
1.0
1.5
2.0 V 2.5
VF
Fig. 10 Forward current versus
voltage drop (Boost Diode)
0.5
0.0
10
typ.
100
A/ms 1000
-diF/dt
Fig. 11 Recovery charge versus -di /dt
F
(Boost Diode)
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