LT580A Просмотр технического описания (PDF) - SEOUL SEMICONDUCTOR

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Компоненты Описание

производитель

LT580A

Precision References

SEOUL SEMICONDUCTOR 

2. Absolute Maximum Ratings ( Ta = 25ºC )

Item

Symbol

DC Forward Current

Forward Peak Pulse Current

Reverse Voltage

Power Dissipation

Operating Temperature

Storage Temperature

Solder Temperature

IF

IFP [1]

VR

PD

Topr

Tstg

Ts

Notes :

[1] t ≤ 0.1ms, D = 1/10

[2] No lower than 3mm from the base of the epoxy bulb.

Value

30

100

5

125

-30 ~ 85

-40 ~ 100

260ºC for 10seconds [2]

3. Electro-Optical Characteristics ( Ta = 25ºC, IF=20mA )

Item

Luminous Intensity [3]

Dominant Wavelength[5]

Forward Voltage [6]

View Angle

Reverse Current (at VR = 5V)

Symbol

IV [4]

λd

VF

2θ ½

IR

Min.

-

519

-

-

Value

Typ.

700

525

3.4

80

-

Max.

-

531

4.0

5

Notes :

[3] SSC maintains a tolerance of ±10% on intensity and power measurements.

[4] IV is the luminous intensity output as measured with a cylinder.

[5] Dominant wavelength is derived from the CIE 1931 Chromaticity diagram.

A tolerance of ±0.5nm for dominant wavelength.

[6] A tolerance of ±0.05V on forward voltage measurements

Unit

mA

mA

V

mW

ºC

ºC

ºC

Unit

mcd

nm

V

deg.

µA

<080924> Rev. 0.1

Rev. 00

December 2007

www.ZLED.com

Document No. : SSC-QP-7-07-24 (Rev.00)

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