2N4403 Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

2N4403

PNP silicon planar epitaxial transistor

ON Semiconductor 

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

VCE = 1.0 V

VCE = 10 V

2N4403

STATIC CHARACTERISTICS

TJ = 125°C

25°C

-ā55°C

0.2 0.3 0.5 0.7 1.0

2.0 3.0 5.0 7.0 10

20 30

IC, COLLECTOR CURRENT (mA)

Figure 14. DC Current Gain

50 70 100

200 300 500

1.0

0.8

0.6

IC = 1.0 mA

0.4

10 mA

100 mA

0.2

0

0.005 0.01

0.02 0.03

0.05 0.07 0.1

0.2 0.3 0.5 0.7 1.0

IB, BASE CURRENT (mA)

2.0 3.0

Figure 15. Collector Saturation Region

5.0 7.0 10

500 mA

20 30 50

1.0

TJ = 25°C

0.8

0.6

0.4

VBE(sat) @ IC/IB = 10

VBE(sat) @ VCE = 10 V

0.2

VCE(sat) @ IC/IB = 10

0

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500

IC, COLLECTOR CURRENT (mA)

Figure 16. “On” Voltages

0.5

0

qVC for VCE(sat)

0.5

1.0

1.5

2.0

qVS for VBE

2.5

0.1 0.2

0.5 1.0 2.0 5.0 10 20 50 100 200 500

IC, COLLECTOR CURRENT (mA)

Figure 17. Temperature Coefficients

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