2N4416 Просмотр технического описания (PDF) - Micro Electronics
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2N4416 Datasheet PDF : 1 Pages
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2N4416A
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N4416A
The 2N4416A is a N-Channel high frequency JFET amplifier
The 2N4416A N-channel JFET is designed to provide
high-performance amplification at high frequencies.
The hermetically sealed TO-72 package is well suited
for military applications. The TO-92 package provides a
lower cost commercial option
2N4416A Benefits:
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
2N4416A Applications:
High-Frequency Amplifier / Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N4416A
EXCEPTIONAL GAIN (400 MHz)
VERY LOW NOISE FIGURE (400 MHz)
VERY LOW DISTORTION
HIGH AC/DC SWITCH OFF‐ISOLATION
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain or Gate to Source
10dB (min)
4dB (max)
‐65°C to +200°C
‐55°C to +135°C
300mW
10mA
‐35V
2N4416A ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP.
MAX
UNITS
BVGSS
Gate to Source Breakdown Voltage ‐35
‐‐
‐‐
V
VGS(off)
Gate to Source Cutoff Voltage
‐2.5
‐‐
‐6
V
IDSS
Gate to Source Saturation Current
5
‐‐
15
mA
IGSS
Gate Leakage Current
‐‐
‐‐
‐0.1
nA
gfs
Forward Transconductance
4500
‐‐
7500
µS
gos
Output Conductance
‐‐
‐‐
50
µS
Ciss
Input Capacitance2
‐‐
‐‐
0.8
pF
Crss
Reverse Transfer Capacitance2
‐‐
‐‐
4
pF
Coss
Output Capacitance2
‐‐
‐‐
2
pF
en
Equivalent Input Noise Voltage
‐‐
6
‐‐
nV/√Hz
2N4416A HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
100 Mhz
400 Mhz
UNITS
CONDITIONS
IG = ‐1µA, VDS = 0V
VDS = 15V, ID = 1nA
VDS = 15V, VGS = 0V
VGS = ‐20V, VDS = 0V
VDS = 15V, VGS = 0V, f = 1kHz
VDS = 15V, VGS = 0V, f = 1MHz
VDS = 10V, VGS = 0V, f = 1kHz
CONDITIONS
MIN MAX MIN MAX
gIss
Input Conductance
‐‐
100
‐‐
1000
bIss
Input Susceptance2
‐‐
2500
‐‐
10000
µS
goss
Output Conductance
‐‐
75
‐‐
100
boss
Output Susceptance2
‐‐
1000
‐‐
4000
VDS = 15V, VGS = 0V
Gfs
Forward Transconductance
‐‐
‐‐
4000
‐‐
Gps
Power Gain2
18
‐‐
10
‐‐
dB
VDS = 15V, ID = 5mA
NF
Noise Figure2
‐‐
2
‐‐
4
VDS = 15V, ID = 5mA, RG = 1kΩ
NOTES
1 . Absolute maximum ratings are limiting values above which 2N4416A serviceability may be impaired.
2. Not production tested, guaranteed by design
Micross Components Europe
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Available Packages:
2N4416A in TO-72
2N4416A in TO-92
2N4416A in bare die.
Please contact Micross for full
package and die dimensions
TO-72 (Bottom View)
TO-92 (Bottom View)
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
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