LT1189 Просмотр технического описания (PDF) - Linear Technology
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LT1189 Datasheet PDF : 12 Pages
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LT1189
+–5V ELECTRICAL CHARACTERISTICS 0°C ≤ TA ≤ 70°C, (Note 3)
VS = ±5V, VREF = 0V, RFB1 = 900Ω from pins 6 to 8, RFB2 = 100Ω from pin 8 to ground, RL = RFB1 + RFB2 = 1k, CL ≤ 10pF, pin 5 open.
SYMBOL
PARAMETER
CONDITIONS
LT1189C
MIN TYP MAX
UNITS
VOS
Input Offset Voltage
(Note 4)
Either Input
SOIC Package
1.0 3.0
mV
1.0 6.0
mV
∆VOS /∆T
IOS
IB
Input VOS Drift
Input Offset Current
Input Bias Current
Input Voltage Range
Either Input
Either Input
5.0
0.2 1.5
± 0.5 ±3.5
– 2.5
3.5
µV/°C
µA
µA
V
CMRR
PSRR
VOUT
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Output Voltage Swing
GE
Gain Error
IS
Supply Current
Shutdown Supply Current
IS/D
Shutdown Pin Current
VCM = – 2.5V to 3.5V
VS = ±2.375V to ±8V
VS = ±5V, RL = 1k, AV = 50
VS = ±8V, RL = 1k, AV = 50
VS = ±8V, RL = 300Ω, AV = 50, (Note 3)
VO = ±1V, AV = 10, RL = 1k
Pin 5 at V–, (Note 11)
Pin 5 at V–
80 105
dB
70
90
dB
±3.7 ±4.0
V
±6.6 ±7.0
±6.4 ± 6.6
1.0 3.5
%
13 17
mA
0.8 1.5
mA
5
25
µA
5V ELECTRICAL CHARACTERISTICS 0°C ≤ TA ≤ 70°C, (Note 3)
VS+ = +5V, VS– = 0V, VREF = 2.5V, RFB1 = 900Ω from pins 6 to 8, RFB2 = 100Ω from pin 8 to VREF, RL = RFB1 + RFB2 = 1k, CL ≤ 10pF, pin 5
open.
LT1189C
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX
UNITS
VOS
∆VOS /∆T
IOS
IB
Input Offset Voltage, (Note 4)
Input VOS Drift
Input Offset Current
Input Bias Current
Input Voltage Range
Either Input
Either Input
Either Input
1.0 3.0
5.0
0.2 1.5
± 0.5 ± 3.5
2.0
3.5
mV
µV/°C
µA
µA
V
CMRR
VOUT
IS
Common-Mode Rejection Ratio
Output Voltage Swing
Supply Current
Shutdown Supply Current
VCM = 2.0V to 3.5V
RL = 300Ω to Ground
(Note 3)
Pin 5 at V, (Note 11)
VOUT High
VOUT Low
80 100
dB
3.5 4.0
V
0.15 0.4
12 16
mA
0.8 1.5
mA
IS/D
Shutdown Pin Current
Pin 5 at V–
5
25
µA
Note 1: A heat sink may be required to keep the junction temperature below
absolute maximum when the output is shorted continuously.
Note 2: TJ is calculated from the ambient temperature TA and power dissipation
PD according to the following formulas:
LT1189MJ8, LT1189CJ8: TJ = TA + (PD × 100°C/W)
LT1189CN8:
TJ = TA + (PD × 100°C/W)
LT1189CS8:
TJ = TA + (PD × 150°C/W)
Note 3: When RL = 1k is specified, the load resistor is RFB1 + RFB2, but when
RL = 300Ω is specified, then an additional 430Ω is added to the output such
that (RFB1 + RFB2) in parallel with 430Ω is RL = 300Ω.
Note 4: VOS measured at the output (pin 6) is the contribution from both input
pair, and is input referred.
Note 5: VIN LIM is the maximum voltage between –VIN and +VIN (pin 2 and
pin 3) for which the output can respond.
Note 6: Slew rate is measured between ±1V on the output, with a VIN step of
±0.5V, AV = 10 and RL = 1k.
Note 7: Full power bandwidth is calculated from the slew rate measurement:
FPBW = SR/2πVp.
Note 8: Settling time measurement techniques are shown in “Take the
Guesswork Out of Settling Time Measurements,” EDN, September 19, 1985.
Note 9: NTSC (3.58MHz).
Note 10: AC parameters are 100% tested on the ceramic and plastic DIP
packaged parts (J8 and N8 suffix) and are sample tested on every lot of the SO
packaged parts (S8 suffix).
Note 11: See Application section for shutdown at elevated temperatures. Do
not operate shutdown above TJ > 125°C.
4
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