LT1170 Просмотр технического описания (PDF) - Linear Technology
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LT1170 Datasheet PDF : 20 Pages
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U
OPERATIO
Temperature rise in a plastic miniDIP would be 130°C/W
times 0.34W, or approximately 44°C. The maximum am-
bient temperature would be limited to 100°C (commercial
temperature limit) minus 44°C, or 56°C.
In most applications, full load current is used to calculate
die temperature. However, if overload conditions must
also be accounted for, four approaches are possible. First,
if loss of regulated output is acceptable under overload
conditions, the internal thermal limit of the LT1172 will
protect the die in most applications by shutting off switch
current. Thermal limit is not a tested parameter, however,
and should be considered only for noncritical applications
with temporary overloads. A second approach is to use the
larger TO-220 (T) or TO-3 (K) package which, even without
a heat sink, may limit die temperatures to safe levels under
overload conditions. In critical situations, heat sinking of
these packages is required; especially if overload condi-
tions must be tolerated for extended periods of time.
The third approach for lower current applications is to
leave the second switch emitter (miniDIP only) open. This
increases switch “on” resistance by 2:1, but reduces
switch current limit by 2:1 also, resulting in a net 2:1
reduction in I2R switch dissipation under current limit
conditions.
The fourth approach is to clamp the VC pin to a voltage less
than its internal clamp level of 2V. The LT1172 switch
current limit is zero at approximately 1V on the VC pin and
2A at 2V on the VC pin. Peak switch current can be
externally clamped between these two levels with a diode.
See AN19 for details.
Synchronizing with Bipolar Transistor
LT1170/LT1171/LT1172
LT1170/LT1171/LT1172 Synchronizing
The LT1170/LT1171/LT1172 can be externally synchro-
nized in the frequency range of 120kHz to 160kHz. This is
accomplished as shown in the accompanying figures.
Synchronizing occurs when the VC pin is pulled to ground
with an external transistor. To avoid disturbing the DC
characteristics of the internal error amplifier, the width of
the synchronizing pulse should be under 0.3µs. C2 sets
the pulse width at ≅ 0.2µs. The effect of a synchronizing
pulse on the LT1170/LT1171/LT1172 amplifier offset can
be calculated from:
( )( ) KT
∆VOS = q
KT
q
=
26mV
at
tS fS
IC
25°C
IC
+
RVC3
tS = pulse width
fS = pulse frequency
IC = VC source current (≈ 200µA)
VC = operating VC voltage (1V to 2V)
R3 = resistor used to set mid-frequency “zero” in
frequency compensation network.
With tS = 0.2µs, fS = 150kHz, VC = 1.5V, and R3 = 2k, offset
voltage shift is ≈ 3.8mV. This is not particularly bother-
some, but note that high offsets could result if R3 were
reduced to a much lower value. Also, the synchronizing
transistor must sink higher currents with low values of R3,
so larger drives may have to be used. The transistor must
be capable of pulling the VC pin to within 200mV of ground
to ensure synchronizing.
Synchronizing with MOS Transistor
VIN
LT1170
GND
VC
R3
2N2369
C1
C2
39pF R1
3k
R2
FROM 5V
2.2k
LOGIC
1170/1/2 OP01
VIN
LT1170
GND
VC
R3
VN2222*
C1
D1
1N4158
C2
100pF
R2
D2
FROM 5V
2.2k
1N4158 LOGIC
* SILICONIX OR EQUIVALENT
1170/1/2 OP02
9
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